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| LESHAN RADIO COMPANY, LTD. Low Noise Transistor PNP Silicon * Pb-Free Package May be Available. The G-Suffix Denotes a Pb-Free Lead Finish 3 LMBT5087LT1 ORDERING INFORMATION 1 Device LMBT5087LT1 Package SOT-23 Shipping 3000/Tape & Reel 3000/Tape & Reel 2 LMBT5087LT1G SOT-23 SOT- 23 (TO-236AB) MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Symbol V CEO V CBO V EBO IC Value - 50 - 50 - 3.0 - 50 Unit Vdc Vdc Vdc mAdc 3 COLLECTOR 1 BASE DEVICE MARKING LMBT5087LT1=2Q 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation RF-5 Board (1) T A =25 C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 R JA PD 556 300 2.4 417 -55to+150 Unit mW mW/C C/W mW mW/C C/W C R JA T J , T stg ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) Characteristic Symbol V (BR)CEO V (BR)CBO I CBO -- -- -10 -50 Min - 50 - 50 Max -- -- Unit Vdc Vdc n Adc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (I C = -1.0 mAdc, I B = 0) Collector-Base Breakdown Voltage (I C = -100 Adc, I E = 0) Collector Cutoff Current (V CB = -10 Vdc, I E= 0) (V CB = -35 Vdc, I E= 0) 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. M17-1/6 LESHAN RADIO COMPANY, LTD. LMBT5087LT1 ELECTRICAL CHARACTERISTICS (T Characteristic A = 25C unless otherwise noted) (Continued) Symbol h FE 250 250 250 V CE(sat) V BE(sat) -- -- 800 -- -- - 0.3 - 0.85 Vdc Vdc Min Max Unit -- ON CHARACTERISTICS DC Current Gain (I C = -100Adc, V CE = -5.0 Vdc) (I C = -1.0 mAdc, V CE = -5.0 Vdc) (I C = -10 mAdc, V CE = -5.0 Vdc) Collector-Emitter Saturation Voltage (I C = -10 mAdc, I B = -1.0 mAdc) Base-Emitter Saturation Voltage (I C = -10 mAdc, I B = -1.0 mAdc) SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (I C = -500 Adc, V CE= -5.0 Vdc, f = 20 MHz) Output Capacitance (V CB= -5.0 Vdc, I E = 0, f = 1.0 MHz) Small-Signal Current Gain (I C= -1.0mAdc, V CE = -5.0Vdc, f = 1.0 kHz) Noise Figure (I C = -20 mAdc, V CE= -5.0 Vdc,Rs=10k, f = 1.0 kHz) (I C = -100Adc, V CE f T 40 -- 250 -- 4.0 900 MHz pF -- dB C obo h fe NF -- -- 2.0 2.0 = -5.0 Vdc,Rs=3.0k, f = 1.0 kHz) M17-2/6 LESHAN RADIO COMPANY, LTD. LMBT5087LT1 TYPICAL NOISE CHARACTERISTICS (V CE = - 5.0 Vdc, T A = 25C) 10 BANDWIDTH = 1.0 Hz R ~0 ~ S 10.0 7.0 5.0 BANDWIDTH = 1.0 Hz R~ ~ S 7.0 I n , NOISE CURRENT (pA) e n , NOISE VOLTAGE (nV) IC=10 A 5.0 3.0 2.0 IC=1.0mA 300A 30A 3.0 100A 1.0mA 300A 1.0 0.7 0.5 0.3 0.2 100A 30A 10A 2.0 1.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 0.1 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k f, FREQUENCY (Hz) f, FREQUENCY (Hz) Figure 1. Noise Voltage Figure 2. Noise Current NOISE FIGURE CONTOURS (V CE = - 5.0 Vdc, T A = 25C) 1.0M 500k BANDWIDTH = 1.0 Hz 1.0M 500k 200k 100k 50k 20k 10k 5.0k 2.0k 1.0k 500 R S , SOURCE RESISTANCE ( ) BANDWIDTH = 1.0 Hz R S , SOURCE RESISTANCE ( ) 200k 100k 50k 20k 10k 5.0k 2.0k 1.0k 500 200 100 10 20 30 50 70 100 200 300 0.5dB 1.0dB 2.0dB 3.0dB 5.0dB 20 30 50 70 100 200 300 500 700 1.0K 0.5dB 1.0dB 2.0dB 3.0dB 5.0dB 500 700 1.0K 200 100 10 I C , COLLECTOR CURRENT (A) I C , COLLECTOR CURRENT (A) Figure 3. Narrow Band, 100 Hz 1.0M 500k 10 Hz to 15.7kHz Figure 4. Narrow Band, 1.0 kHz R S , SOURCE RESISTANCE ( ) 200k 100k 50k 20k 10k 5.0k 2.0k 1.0k 500 200 100 10 20 30 50 70 100 200 300 Noise Figure is Defined as: NF = 20 log 10 ( ---------------) 4KTR S e n 2 + 4KTRS + I n2 R S2 1/ 2 0.5dB 1.0dB 2.0dB 3.0 dB 5.0dB 500 700 1.0K e n = Noise Voltage of the Transistor referred to the input. (Figure 3) I n = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman's Constant (1.38 x 10 -23 j/K) T = Temperature of the Source Resistance (K) R s = Source Resistance ( ) I C , COLLECTOR CURRENT (A) Figure 5. Wideband 8 M17-3/6 LESHAN RADIO COMPANY, LTD. LMBT5087LT1 TYPICAL STATIC CHARACTERISTICS 1.0 100 VCE,COLLECTOR-EMITTERVOLTAGE(VOLTS) I C , COLLECTOR CURRENT (mA) TA=25C 0.8 80 T A = 25C PULSE WIDTH =300 s DUTY CYCLE<2.0% 300A I B= 400 A 350A 250A 200A 150A 0.6 I C= 1.0 mA 10 mA 50mA 100 mA 60 0.4 40 100A 50A 0.2 20 0 0.002 0.0050.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0 0 5.0 10 15 20 25 30 35 40 I B , BASE CURRENT (mA) V CE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. Collector Saturation Region V , TEMPERATURE COEFFICIENTS (mV/C) Figure 7. Collector Characteristics 1.4 1.6 T J=25C 1.2 *APPLIES for I C / I B< h FE / 2 0.8 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 VC for V CE(sat) 0 25Cto125C -55Cto25C V BE(sat) @ I C /I B = 10 V BE(on)@ V CE= 1.0 V -0.8 25Cto125C VB for V BE -55Cto25C 0.4 0.2 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 -1.6 V CE(sat) @ I C /I B = 10 -2.4 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 10. "On" Voltages Figure 11. Temperature Coefficients M17-4/6 LESHAN RADIO COMPANY, LTD. LMBT5087LT1 TYPICAL DYNAMIC CHARACTERISTICS 500 300 200 1000 V CC= 3.0 V IC /I B= 10 T J= 25C t, TIME (ns) 700 500 300 200 100 70 50 30 20 10 ts VCC=-3.0V IC /I B= 10 IB1=IB2 T J= 25C t, TIME (ns) 100 70 50 30 20 10 7.0 5.0 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 tr td @ V BE(off)= 0.5 V tf -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 10. Turn-On Time f T, CURRENT- GAIN -- BANDWIDTH PRODUCT (MHz) 500 10.0 Figure 11. Turn-Off Time T J = 25C 300 T J= 25C V CE =20 V 5.0 V C, CAPACITANCE (pF) 7.0 C ib 5.0 200 3.0 100 2.0 C ob 70 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 1.0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 I C , COLLECTOR CURRENT (mA) V R , REVERSE VOLTAGE (VOLTS) Figure 12. Current-Gain -- Bandwidth Product r ( t ) TRANSIENT THERMAL RESISTANCE(NORMALIZED) 1.0 0.7 0.5 0.3 0.2 Figure 13. Capacitance D = 0.5 0.2 0.1 FIGURE 16 0.05 P(pk) 0.02 0.01 t SINGLE PULSE 1 0.1 0.07 0.05 0.03 0.02 0.01 0.01 0.02 DUTY CYCLE, D = t 1 / t 2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 (SEE AN-569) t 2 Z JA(t) = r(t) * RJA T J(pk) - T A = P (pk) Z JA(t) 1.0k 2.0k 5.0k 10k 20k 50k 100k 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 t, TIME (ms) Figure 14. Thermal Response M17-5/6 LESHAN RADIO COMPANY, LTD. LMBT5087LT1 104 V CC = 30 V I C , COLLECTOR CURRENT (nA) 10 3 DESIGN NOTE: USE OF THERMAL RESPONSE DATA A train of periodical power pulses can be represented by the model as shown in Figure 16. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 14 was calculated for various duty cycles. To find Z JA(t) , multiply the value obtained from Figure 14 by the steady state value R JA . Example: Dissipating 2.0 watts peak under the following conditions: t 1 = 1.0 ms, t 2 = 5.0 ms. (D = 0.2) Using Figure 16 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore T = r(t) x P (pk) x R JA = 0.22 x 2.0 x 200 = 88C. For more information, see AN-569. I CEO 102 101 I CBO 100 AND I CEX @ V BE(off) = 3.0 V 10-1 10-2 -4 -2 0 +20 +40 +60 +80 +100 +120 +140 +160 T J , JUNCTION TEMPERATURE (C) Figure 15. Typical Collector Leakage Current M17-6/6 |
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